Semiconductor structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorWEI-LUN CHEN
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Abstract
A semiconductor structure comprises a substrate and a fin extruding from the substrate along a first direction, wherein the fin comprises a first conductive type semiconductive layer over the substrate, a second conductive type semiconductive layer stacking over the first conductive type semiconductive layer along the first direction, and a dielectric layer sandwiched by the first conductive type semiconductive layer and the second conductive type semiconductive layer providing electrical isolation along the first direction between the first conductive type semiconductive layer and the second conductive type semiconductive layer.
Claims20
A semiconductor structure, comprising:
- a substrate;
- and
- a fin extruding from the substrate along a first direction, wherein the fin comprises a first conductive type semiconductive layer over the substrate, a second conductive type semiconductive layer stacking over the first conductive type semiconductive layer along the first direction, and a dielectric layer sandwiched by the first conductive type semiconductive layer and the second conductive type semiconductive layer providing electrical isolation along the first direction between the first conductive type semiconductive layer and the second conductive type semiconductive layer.
A semiconductor structure, comprising;
- a substrate;
- a first conductive type Fin field effect transistor (FinFET) over the substrate;
- a second conductive type FinFET stacking over the first conductive type FinFET along a first direction;
- a dielectric layer providing isolation between the first conductive type FinFET and the second conductive type FinFET along the first direction;
- and
- a conductive rail lining along the second conductive type FinFET and extending on a second direction perpendicular to the first direction.
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- and
- forming a fin structure over the substrate comprising stacking a first conductive type semiconductive layer, a dielectric layer and a second conductive type semiconductive layer along a first direction.
Dependencies are inferred from the claim text.