Semiconductor device and method for fabricating the same

A semiconductor device, comprising:

• an active region that extends in a first direction and has a first width in a second direction that intersects the first direction;
• a first gate structure disposed on the active region that includes first and second sides that face each other and that has a second width in the first direction and that extends in the second direction;
• first and second metal contacts spaced apart from each of the first and second sides of the first gate structure in the first direction;
• a first trench formed in the active region and that extends m the second direction between the first side of the first gate structure and the first metal contact, and a second trench that extends in the second direction between the second side of the first gate structure and the second metal contact;
• and
• an insulating material that fills the first trench and forms a first active cut having a starting point and a termination point spaced from the starting point along the second direction inside the active region,
• wherein the first active cut defines a first metal region in the active region in which the first metal contact is located, and which is surrounded by a first virtual line that extends from the starting point of the first active cut along the first direction, a second virtual line that extends from the termination point of the first active cut along the first direction, and the insulating material, and a first distance from the first metal contact to the first virtual line is less than a second distance from the first metal contact to the second virtual line, and
• a length along the first direction of a region in which the first gate structure and the active region overlap is greater than lengths of the first and second trenches extending in the first direction.