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US 2022/0037308 A1Published application
Multi-fingered diode with reduced capacitance and method of making the same
AssigneeSTMicroelectronics International N.V.
InventorVishal Kumar SHARMA
Life of this patent
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Abstract
A diode and method of design the layout of the same having reduced parasitic capacitance is disclosed. In particular, the diode for providing fast response protection of an RF circuit from a high power noise event, such as an ESD, voltage spike, power surge or other noise is disclose. The parasitic capacitance in disclosed circuit is a greatly reduced compared to the prior art, thus significantly increasing the speed of the response to dissipate all high power noise events.
Claims20
A device, comprising:
- a substrate including:
- a first surface;
- a first doped region in the substrate and exposed from the first surface of the substrate;
- a second doped region in the substrate and exposed from the first surface of the substrate, the second doped region spaced apart from the first doped region, the second doped region extends around the first doped region;
- a first insulation layer on the first surface, on the first doped region, and on the second doped region, the first insulation layer having a second surface facing away from the first surface;
- a plurality of first vias extend through the first insulation layer from the first surface to the second surface, the plurality of first vias coupled to the second doped region, each one of the plurality of first vias including an end exposed from the first insulation layer;
- a first metal layer on the first insulation layer and on the ends of the plurality of first vias, the first metal layer coupled to the second doped region by the plurality of first vias, the first metal layer extends around the first doped region and overlaps the second doped region;
- and
- a plurality of second metal layers on the first insulation layer, the plurality of second metal layers overlap the first doped region, each one of the plurality of second metal layers are spaced apart from each other.
6 more elements
A device, comprising:
- a substrate including:
- a first surface;
- a first doped region in the substrate and exposed from the first surface of the substrate;
- a second doped region in the substrate and exposed from the first surface of the substrate, the second doped region spaced apart from the first doped region, the second doped region extends around the first doped region;
- a first insulation layer on the first surface, on the first doped region, and on the second doped region, the first insulation layer having a second surface facing away from the first surface;
- a plurality of vias extend through the first insulation layer from the first surface to the second surface, the plurality of vias coupled to the second doped region, each respective via of the plurality of vias including an end exposed from the first insulation layer;
- a plurality of first metal layers on the first insulation layer and on the ends of the plurality of vias, the plurality of first metal layers coupled to the second doped region by the plurality of vias, the plurality of first metal layers extend around the first doped region and overlap the second doped region, each one of the plurality of first metal layers is spaced apart from each other;
- and
- a plurality of second metal layers on the first insulation layer, the plurality of second metal layers overlap the first doped region, each one of the plurality of second metal layers are spaced apart from each other.
6 more elements
A device, comprising:
- a substrate;
- a first doped region within the substrate and exposed from the substrate;
- a second doped region within the substrate, exposed from the substrate, and extending around the first doped region;
- a first insulation layer on the substrate;
- a second insulation layer on the first insulation layer;
- a plurality of diodes, each one of the plurality of diodes including:
- a cathode electrode exposed from the second insulation layer and overlapping the first doped region;
- and
- an anode electrode exposed from the second insulation layer, the anode electrode extends around the cathode electrode and overlapping the second doped region;
- a guard ring extends around the plurality of diodes.
7 more elements
Dependencies are inferred from the claim text.