Semiconductor device for power electronics applications

A semiconductor device for integration into a power module, the semiconductor device comprising

• (a) a semiconductor layer (10), a first side of the semiconductor layer (10) being provided with a plurality of depressions (11) as pits;
• (b) an insulating layer (12;
• 12a, 12b), the insulating layer being deposited on the first side of the semiconductor layer (10) and extending into the pits (11);
• (c) a first electrically conductive layer (14;
• 14a, 14b) for contacting the semiconductor device (3), the first electrically conductive layer (14;
• 14a, 14b) being deposited on the insulating layer (12;
• 12a, 12b) and extending into, but not filling (34), the pits (11);
• and
• (d) a second electrically conductive layer (16), the second electrically conductive layer (16) being deposited on a second side of the semiconductor layer (10) located opposite to the first side;
• wherein the insulating layer (12) has thickenings (30) in opening areas of the pits (11), a respective thickening (30) defining a conductive region (32) having a narrowed cross-section in the first electrically conductive layer (14;
• 14a, 14b).

A semiconductor device for integration into a power module with at least one deactivatable power semiconductor, the semiconductor device comprising

• (a) a semiconductor layer (10), a first side of the semiconductor layer (10) having a plurality of depressions (11) as pits;
• (b) an electrically conductive layer (16), the electrically conductive layer (16) being deposited on a second side of the semiconductor layer (10) that is located opposite to the first side;
• (c) an insulating layer (12;
• 12a, 12b), the insulating layer being deposited on the first side of the semiconductor layer (10) and extending into the pits (11);
• (d) a further electrically conductive layer (14;
• 14a, 14b) for contacting the semiconductor device (3), the further electrically conductive layer (14;
• 14a, 14b) being deposited on the insulating layer (12) and the further electrically conductive layer (14;
• 14a, 14b) having a plurality of narrow sections (22, 32).