Die Traceability Using Backside Mask Layers
AssigneeNXP USA, Inc.
InventorsDavid Robert Currier, Darrell Glenn Hill, Fred Reece Clayton, Alan J. Magnus, Warren Crapse
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AssigneeNXP USA, Inc.
InventorsDavid Robert Currier, Darrell Glenn Hill, Fred Reece Clayton, Alan J. Magnus, Warren Crapse
Estimating the term…
A method of making a semiconductor device is provided for depositing, patterning, and developing photoresist (1703, 1704) on an underlying layer located on a backside of a wafer having a frontside on which an integrated circuit die are formed over a shared wafer semiconductor substrate and arranged in a grid, thereby forming a patterned photoresist mask with a unique set of one or more openings which are used to selectively etch the underlying layer to form, on each integrated circuit die, a unique die mark identifier pattern of etched openings in the underlying layer corresponding to the unique set of one or more openings in the patterned photoresist mask (1705), where the patterned photoresist mask is removed (1706) from the backside of the wafer before singulating the wafer to form a plurality of integrated circuit devices (1708) which each include a unique die marking.
A method for making an integrated circuit die, comprising:
A method for making a chip device comprising:
An integrated circuit device, comprising:
Dependencies are inferred from the claim text.