Integrated circuit (ic) package with stacked die wire bond connections, and related methods
AssigneeQUALCOMM Incorporated
InventorsKuiwon Kang, Michelle Yejin Kim, Joan Rey Villarba Buot, Jialing Tong
Life of this patent
Estimating the term…
Abstract
An integrated circuit (IC) package with stacked die wire bond connections has two stacked IC dies, where a first die couples to a metallization structure directly and a second die stacked on top of the first die connects to the metallization structure through wire bond connections. The IC dies are coupled to one another through an interior metal layer of the metallization structure. Vias are used to couple to the interior metal layer.
Claims27
An integrated circuit (IC) package comprising:
- a metallization structure comprising a metal layer;
- and
- an IC die coupled to the metal layer within the metallization structure through a wire bond connection and a via within the metallization structure.
An integrated circuit (IC) package, comprising:
- a metallization structure comprising:
- a first metal layer;
- and
- a second metal layer separated from the first metal layer;
- a first IC die adjacent to the metallization structure and coupled to the second metal layer;
- and
- a second IC die adjacent to the first IC die, the second IC die coupled to the second metal layer of the metallization structure through a via, wherein the first IC die is coupled to the second IC die through the second metal layer.
A method of fabricating an integrated circuit (IC) package, comprising:
- forming a metallization structure comprising a first metal layer and a second metal layer;
- connecting a contact pad in the first metal layer to the second metal layer through a via;
- and
- connecting an IC die to the contact pad through a wire bond connection.
Dependencies are inferred from the claim text.