Semiconductor structure having via through bonded wafers and manufacturing method thereof

A semiconductor structure, comprising:

• a first wafer including a first substrate, a first dielectric layer over the first substrate, and a first conductive pad surrounded by the first dielectric layer;
• a second wafer including a second dielectric layer, a second substrate over the second dielectric layer, and a second conductive pad surrounded by the second dielectric layer;
• a bonding dielectric disposed between the first dielectric layer and the second dielectric layer to bond a first surface of the first dielectric layer with a second surface of the second dielectric layer;
• and
• a conductive via extending from the first conductive pad and surrounded by the bonding dielectric, the second conductive pad and the second wafer;
• wherein the first conductive pad is at least partially exposed through the first dielectric layer, and the first conductive pad includes a first exposed surface coplanar with the first surface of the first dielectric layer.