Package structure and method

A package structure comprising:

• an interposer die, the interposer die comprising a die connector;
• a first conductive pad coupled to the die connector;
• and
• a redistribution structure bonded to first conductive pad, the redistribution structure comprising:
• a first insulating layer;
• a second insulating layer, the first insulating layer being interposed between the second insulating layer and the first conductive pad;
• a third insulating layer, the second insulating layer being interposed between the third insulating layer and the first insulating layer;
• a first metallization pattern in the first insulating layer and the second insulating layer, the first metallization pattern comprising a first conductive line and a first conductive via coupled to the first conductive line, the first conductive line being in the second insulating layer, the first conductive via extending through the first insulating layer and being coupled to the first conductive pad, the first conductive line comprising:
• a second conductive pad coupled to the first conductive via;
• a third conductive pad;
• and
• a curved portion connecting the second conductive pad to the third conductive pad;
• and
• a second metallization pattern in the second insulating layer and the third insulating layer, the second metallization pattern comprising a second conductive via, the second conductive via extending through the second insulating layer and being coupled to the third conductive pad of the first conductive line.

A method comprising:

• forming a redistribution structure over a carrier substrate, wherein forming the redistribution structure comprises:
• forming a first insulating layer over the carrier substrate;
• forming a first metallization pattern in and along an upper surface of the first insulating layer, the first metallization pattern comprising a first conductive line and a first conductive via coupled to the first conductive line, the first conductive line extending along the upper surface of the first insulating layer, the first conductive via extending through the first insulating layer, the first conductive line comprising:
• a first conductive pad coupled to the first conductive via;
• a second conductive pad;
• and
• a curved portion connecting the first conductive pad to the second conductive pad;
• and
• forming a second insulating layer over the first insulating layer and the first metallization pattern;
• and
• forming an under-bump metallization (UBM) structure over the redistribution structure, wherein forming the UBM structure comprises:
• forming a second conductive via in the second insulating layer, the second conductive via being coupled to the second conductive pad;
• forming a third conductive pad over the second conductive via;
• and
• forming a conductive column over the third conductive pad, the third conductive pad electrically coupling the conductive column to the second conductive via.