Wiring structure and method for manufacturing the same
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorsWen Hung HUANG, Min Lung HUANG
Life of this patent
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Abstract
A wiring structure and a method for manufacturing the same are provided. The wiring structure includes a conductive structure and at least one conductive through via. The conductive structure includes a plurality of dielectric layers, a plurality of circuit layers in contact with the dielectric layers, and a plurality of dam portions in contact with the dielectric layers. The dam portions are substantially arranged in a row and spaced apart from one another. The conductive through via extends through the dam portions.
Claims22
A wiring structure, comprising:
- a conductive structure including a plurality of dielectric layers, a plurality of circuit layers in contact with the dielectric layers, and a plurality of dam portions in contact with the dielectric layers, wherein the dam portions are substantially arranged in a row and spaced apart from one another;
- and
- at least one conductive through via extending through the dam portions;
- wherein the dielectric layer defines a recess portion in a gap between two of the dam portions.
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A wiring structure, comprising:
- a lower conductive structure including at least one dielectric layer and at least one circuit layer in contact with the dielectric layer;
- an upper conductive structure disposed on the lower conductive structure, wherein the upper conductive structure includes a plurality of dielectric layers, a plurality of circuit layers in contact with the dielectric layers, and a plurality of dam portions in contact with the dielectric layers, wherein the dam portions are substantially arranged in a row and spaced apart from one another;
- and
- at least one conductive through via extending through the dam portions and the upper conductive structure, and terminating on the circuit layer of the lower conductive structure;
- wherein the dam portion includes a concave portion on an end thereof, and the dielectric layer covers the concave portion.
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Dependencies are inferred from the claim text.