Semiconductor Device Package Comprising Side Walls Connected with Contact Pads of a Semiconductor Die

A method for fabricating a semiconductor device package, the method comprising:

• providing a printed circuit board comprising a first central area, a second lateral area, and a third lateral area, wherein a semiconductor die comprising contact pads is disposed in the first central opening, a first metallic side wall is disposed in the second lateral area, and a second metallic side wall is disposed in the third lateral area;
• electrically connecting at least one of the first and second metallic side walls with one of the contact pads of the semiconductor die;
• and
• finishing the semiconductor device package so that the first and second metallic side walls are exposed to the outside and defining a respective side wall of the semiconductor device package.

A semiconductor device package, comprising:

• a printed circuit board comprising a first central area;
• a semiconductor die comprising a first main face and a second main face opposite to the first main face, a first contact pad disposed on the first main face and a second contact pad disposed on the second main face, the semiconductor die being disposed in the first area of the printed circuit board
• a first metallic via bar disposed on the first contact pad of the semiconductor die, the first metallic via bar comprising a thickness of at least 100 μm;
• and
• a second metallic via bar disposed on the second contact pad of the semiconductor die, the second metallic via bar comprising a thickness of at least 100 μm.

A method for fabricating a semiconductor device package, the method comprising:

• providing a printed circuit board comprising a first central opening, wherein a semiconductor die is disposed in the first central opening, the semiconductor die comprising a first main face and a second main face opposite to the first main face and a first contact pad disposed on the first main face and a second contact pad disposed on the second main face;
• disposing a first metallic via bar on the first contact pad of the semiconductor die, the first metallic via bar comprising a thickness of at least 100 μm;
• and
• disposing a second metallic via bar on the second contact pad of the semiconductor die, the second metallic via bar comprising a thickness of at least 100 μm.