Methods and apparatus for backside via reveal processing

A method for performing a backside via reveal process, comprising:

• receiving, by a central controller, process tool operational parameters from process tools involved in the backside via reveal process;
• receiving, by the central controller, metrology sensor data from at least one or more of the process tools involved in the backside via reveal process;
• and
• altering, by the central controller, the backside reveal process based, at least in part, on the process tool operational parameters and the metrology sensor data by adjusting profile parameters of two or more of the process tools involved in the backside via reveal process, wherein the profile parameters are configured to prevent backside via breakage during chemical mechanical polishing (CMP) processes.
• wherein the backside via reveal process includes:
• temporarily bonding and back grinding a backside of a substrate;
• performing a first chemical mechanical polishing (CMP) process on the backside of the substrate;
• etching the backside of the substrate to create recesses around vias;
• depositing a passivation layer on the backside of the substrate;
• and
• performing a second CMP process to reveal vias on the backside of the substrate.

A method for performing a backside via reveal process. comprising:

• receiving, by a central controller, an initial profile of a substrate and a finished profile of a substrate for the backside via reveal process;
• receiving, by the central controller, process tool operational parameters from process tools involved in the backside via reveal process;
• receiving, by the central controller, sensor metrology data from at least one of the process tools involved in the backside via reveal process;
• determining, by the central controller, two or more individual process tool recipes based on the initial profile, the finished profile, the process tool operational parameters, and the sensor metrology data, wherein the individual process tool recipes are configured to distributively alter the initial profile to produce the finished profile;
• and
• transmitting, by the central controller, the two or more individual process tool recipes to associated process tools involved in the backside reveal process, resulting in profile changes to the substrate,
• wherein the backside via reveal process includes:
• temporarily bonding and back grinding a backside of the substrate;
• performing a first chemical mechanical polishing (CMP) process on the backside of the substrate;
• etching the backside of the substrate to create recesses around vias;
• depositing a passivation layer on the backside of the substrate;
• and
• performing a second CMP process to reveal vias on the backside of he substrate.

A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for performing a backside reveal process to be performed, the method comprising:

• receiving, by a central controller, process tool operational parameters am process tools involved in the backside via reveal process;
• receiving, by the central controller, sensor metrology data from at least one or more of the process tools involved in the backside via reveal process;
• and
• altering, by the central controller, the backside reveal process based, at least in part, on the process tool operational parameters and the sensor metrology data by adjusting profile parameters of two or more of the process tools involved in the backside via reveal process, wherein the profile parameters are configured to prevent backside via breakage during a chemical mechanical polishing (CMP) process,
• wherein the backside via reveal process includes:
• temporarily bonding and back grinding a backside of a substrate;
• etching the backside of the substrate to create recesses around vias;
• depositing a passivation layer on the backside of the substrate;
• and
• performing the CMP process to reveal vias on the backside of the substrate.