US 2022/0037212 A1 · Scalable Device for FINFET Technology

Abstract

Scalable device designs for FINFET technology are provided. In one aspect, a method of forming a FINFET device includes: patterning fins in a substrate which include a first fin(s) corresponding to a first FINFET device and a second fin(s) corresponding to a second FINFET device; depositing a conformal gate dielectric over the fins; depositing a conformal sacrificial layer over the gate dielectric; depositing a sacrificial gate material over the sacrificial layer; replacing the sacrificial layer with a first workfunction-setting metal(s) over the first fin(s) and a second workfunction-setting metal(s) over the second fin(s); removing the sacrificial gate material; forming dielectric gates over the first workfunction-setting metal(s), the second workfunction-setting metal(s) and the gate dielectric forming gate stacks; and forming source and drains in the fins between the gate stacks, wherein the source and drains are separated from the gate stacks by inner spacers. A FINFET device is also provided.

Claims20

Dependent claims

A fin field-effect transistor (FINFET), comprising:

fins patterned in a substrate, wherein the fins comprise at least one first fin corresponding to a first FINFET device and at least one second fin corresponding to a second FINFET device;
a conformal gate dielectric disposed over the fins;
at least one first workfunction-setting metal disposed over the at least one first fin and at least one second workfunction-setting metal disposed over the at least one second fin, wherein the at least one first workfunction-setting metal and the at least one second workfunction-setting metal have the same thickness T;
dielectric gates formed over the at least one first workfunction-setting metal, the at least one second workfunction-setting metal and the conformal gate dielectric forming gate stacks of the first FINFET device and the second FINFET device;
and
source and drains formed in the fins between the gate stacks, wherein the source and drains are separated from the gate stacks by inner spacers.

3 more elements

Dependencies are inferred from the claim text.

Scalable Device for FINFET Technology

Life of this patent

Scalable Device for FINFET Technology

Life of this patent

Abstract

Claims20