Method for manufacturing semiconductor structure

Abstract

One form of a method for manufacturing a semiconductor structure includes: providing a base, where the base includes a substrate and a plurality of discrete fins located on the substrate, a device region and an isolation region that are adjacent to each other, a metal gate structure formed on the substrate, where the metal gate structure spans the fins and covers parts of the tops and parts of side walls of the fins, an interlayer dielectric layer that is formed on the substrate exposed by the metal gate structure, where the interlayer dielectric layer covers a side wall of the metal gate structure; performing dry etching, where the metal gate structure in the isolation region and the fins located below the metal gate structure are sequentially etched to form an isolation trench surrounded by the interlayer dielectric layer and the remaining base; and forming an isolation structure in the isolation trench to simplify process steps of forming an isolation structure.

Dependencies are inferred from the claim text.