Method for manufacturing semiconductor device, method for packaging semiconductor chip, method for manufacturing shallow trench isolation (sti)

A method for manufacturing a semiconductor device, the method comprising:

• forming a source region, a drain region, and a gate electrode over a channel region between the source region and the drain region;
• forming an insulating layer over the source region, the drain region, and the gate electrode;
• and
• forming vias by two processes comprising ion bombarding and thermal annealing, wherein the ion bombarding comprises bombarding portions of the insulating layer overlying each one of the source region, the drain region, and the gate electrode at two or more connected sections at two or more different depths with an ion beam to form two or more bombarded connected sections in the insulating layer overlying each one of the source region, the drain region, and the gate electrode,
• wherein the thermal annealing comprises annealing the insulating layer after each ion bombarding of a section of the two or more connected sections to convert the section to a void, thereby converting the two or more bombarded connected sections overlying each one of the source region, the drain region, and the gate electrode to the vias, thereby exposing portions of the source region, the drain region, and the gate electrode, respectively, wherein centers of the two or more connected sections are laterally shifted with respect to each other, and
• wherein the ion bombarding comprises a first ion bombarding and a second ion bombarding, the thermal annealing comprises a first thermal annealing and a second thermal annealing, and the two or more connected sections comprise a first section and a second section, and wherein in at least one of the source region, the drain region, and the gate electrode, the first ion bombarding of the first section is followed by the first thermal annealing of the insulating layer, the first thermal annealing is followed by the second ion bombarding of the second section, and the second ion bombarding is followed by the second annealing of the insulating layer.

A method for manufacturing a semiconductor device, the method comprising:

• forming a source region and a drain region in a substrate;
• forming a gate electrode over the substrate between the source region and the drain region;
• forming an insulating layer over the source region, the drain region, and the gate electrode;
• and
• forming vias by two processes comprising bombarding a plurality of connected sections at a plurality of different depths over at least one of the source region, drain region, and gate electrode in the insulating layer using an ion beam, and thermal annealing the insulating layer after each ion bombarding of a section of the plurality of connected sections to form the vias thereby exposing the source region, drain region, and gate electrode, wherein at least a section of the plurality of connected sections laterally extends further than other sections of the plurality of connected sections, wherein centers of the plurality connected sections are laterally shifted with respect to each other,
• wherein the ion bombarding comprises a first ion bombarding and a second ion bombarding, the thermal annealing comprises a first thermal annealing and a second thermal annealing, and the plurality of connected sections comprise a first section and a second section, and wherein the first ion bombarding of the first section is followed by the first thermal annealing, the first thermal annealing is followed by the second ion bombarding of the second section, and the second ion bombarding is followed by the second annealing.