Methods for Forming a Semiconductor Device

A method of forming a semiconductor device, the method comprising:

• forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate;
• increasing the porosity of the first semiconductor layer;
• first annealing the first semiconductor layer in an atmosphere including at least one material from the group nitrogen and argon;
• forming a second semiconductor layer on the first semiconductor layer;
• and
• separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer.

A method of forming a semiconductor device, the method comprising:

• forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate;
• increasing the porosity of the first semiconductor layer;
• decreasing the dopant concentration of the first semiconductor layer so that the dopant concentration of the first semiconductor layer is 5*1016 cm−3 or less;
• forming a second semiconductor layer on the first semiconductor layer;
• and
• separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer.

A method of forming a semiconductor device, the method comprising:

• forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate;
• increasing the porosity of the first semiconductor layer;
• decreasing the dopant concentration of the first semiconductor layer by at least 15%;
• forming a second semiconductor layer on the first semiconductor layer;
• and
• separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer.