Semiconductor Etching Method

Abstract

A semiconductor etching method that comprises providing a material layer to be etched; sequentially forming on the material layer to be etched a first mask layer and a second mask layer that covers the first mask layer; patterning the second mask layer to form differently sized opening patterns that expose the first mask layer with differently sized regions; performing ion implantation on the exposed regions on the basis of the opening patterns; ion implantation concentration in each region is in direct proportion to the width of the region, and material etching removal rate of the ion-implanted region is in reverse proportion to the ion implantation concentration in the region; and basing on the opening patterns to etch the ion-implanted regions into the material layer to be etched to form grooves identical in size with the opening patterns, wherein depths of the grooves are approximate to or identical with one another.

Dependencies are inferred from the claim text.