Method of manufacturing semiconductor device

Abstract

An object of the present invention is to improve the flatness of a surface electrode without increasing the number of steps in a semiconductor device having gate structures. A method of manufacturing a semiconductor device of the present invention includes the steps of discretely forming a plurality of gate structures on a first main surface of the semiconductor substrate, discretely forming a plurality of gate interlayer films covering the plurality of gate structures of the semiconductor substrate, forming a first surface electrode being thicker than the gate interlayer films on the first main surface of the semiconductor substrate between the plurality of the gate interlayer films and on the plurality of the gate interlayer films by sputtering, and removing convex portions of concave portions and the convex portions on the first surface electrode by dry etching using photolithography, to flatten an upper surface of the first surface electrode.

Dependencies are inferred from the claim text.