Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorKuan-Ting Chen
Life of this patent
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a hard mask on a substrate; forming a first mandrel and a second mandrel on the hard mask; forming a first spacer and a second spacer around the first mandrel and a third spacer and a fourth spacer around the second mandrel; removing the second mandrel; forming a patterned mask on the first mandrel, the first spacer, the second spacer, the third spacer, and the fourth spacer; and using the patterned mask to remove the third spacer and the hard mask.
Claims20
A method for fabricating semiconductor device, comprising:
- forming a hard mask on a substrate;
- forming a first mandrel and a second mandrel on the hard mask;
- forming a first spacer and a second spacer around the first mandrel and a third spacer and a fourth spacer around the second mandrel;
- removing the second mandrel;
- forming a patterned mask on the first mandrel, the first spacer, the second spacer, the third spacer, and the fourth spacer;
- and
- using the patterned mask to remove the third spacer and the hard mask.
A semiconductor device, comprising:
- a base on a substrate;
- and
- a first fin-shaped structure adjacent to the base, wherein a surface of the substrate between the base and the first fin-shaped structure comprises a first curve concave upward.
A semiconductor device, comprising:
- a base on a substrate;
- and
- a first fin-shaped structure adjacent to the base, wherein a surface of the substrate between the base and the first fin-shaped structure comprises a curve concave downward.
Dependencies are inferred from the claim text.