In-situ high power implant to relieve stress of a thin film

A method of processing a substrate, comprising:

• depositing a diamond-like carbon hardmask over a film stack formed on a substrate by applying a first RF power having a first power level to an electrostatic chuck via a first electrode, wherein the substrate is positioned on the electrostatic chuck in which the first electrode is disposed;
• implanting ions into the diamond-like carbon hardmask, wherein depositing the diamond-like carbon hardmask and implanting ions into the diamond-like carbon hardmask are performed simultaneously in the same process chamber;
• repeating depositing the diamond-like carbon hardmask and implanting ions into the diamond-like carbon hardmask in a cyclic fashion until a pre-determined thickness of the diamond-like carbon hardmask is reached;
• patterning the diamond-like carbon hardmask to form a patterned diamond-like carbon hardmask;
• etching the film stack using the patterned diamond-like carbon hardmask;
• and
• removing the diamond-like carbon hardmask.