Spin on carbon composition and method of manufacturing a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJing Hong HUANG, Ching-Yu CHANG, Wei-Han LAI
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Abstract
A method of manufacturing a semiconductor device includes forming a spin on carbon layer comprising a spin on carbon composition over a semiconductor substrate. The spin on carbon layer is first heated at a first temperature to partially crosslink the spin on carbon layer. The spin on carbon layer is second heated at a second temperature to further crosslink the spin on carbon layer. An overlayer is formed over the spin on carbon layer. The second temperature is higher than the first temperature.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a spin on carbon layer comprising a spin on carbon composition over a semiconductor substrate;
- first heating the spin on carbon layer at a first temperature to partially crosslink the spin on carbon layer;
- second heating the spin on carbon layer at a second temperature to further crosslink the spin on carbon layer;
- and
- forming an overlayer over the spin on carbon layer,
- wherein the second temperature is higher than the first temperature.
A method of manufacturing a semiconductor device, comprising:
- forming a bottom layer over a semiconductor substrate,
- wherein the bottom layer comprises:
- a carbon backbone polymer;
- a first crosslinker;
- and
- a second crosslinker;
- first heating the bottom layer at a first temperature to partially crosslink the bottom layer via the first crosslinker;
- second heating the bottom layer at a second temperature higher than the first temperature to further crosslink the bottom layer via the second crosslinker;
- forming a middle layer over the bottom layer;
- and
- forming a photoresist layer over the middle layer,
- wherein the middle layer has a different composition than the bottom layer and photoresist layer.
A spin on carbon composition, comprising:
- a carbon backbone polymer;
- a first crosslinker;
- and
- a second crosslinker,
- wherein the first crosslinker reacts with the carbon backbone polymer to partially crosslink the first polymer at a first temperature, and the second crosslinker reacts with the first polymer to further crosslink the carbon backbone polymer at a second temperature higher than the first temperature.
Dependencies are inferred from the claim text.