Photoresist structure, patterned deposition layer, semiconductor chip and manufacturing method thereof

A method for manufacturing a patterned deposition layer, the method comprising:

• obtaining a photoresist structure by performing steps comprising:
• forming a first photoresist layer on a substrate;
• performing first baking;
• forming a second photoresist layer on the first photoresist layer after the first baking;
• performing second baking;
• performing under exposure to the second photoresist layer after the second baking, a duration of the under exposure being less than a duration of full exposure of the second photoresist layer;
• performing third baking;
• developing and fixing the second photoresist layer after the third baking to obtain a partially patterned second photoresist layer, the partially patterned second photoresist layer comprising a first opening, the first opening comprising:
• a first part;
• and
• a second part located between the first part and the first photoresist layer, an aperture of the first part being smaller than an aperture of the second part, and an orthographic projection of the first part on the substrate is within an orthographic projection of the second part on the substrate;
• flood exposing the partially patterned second photoresist layer;
• performing fourth baking to obtain a patterned second photoresist layer;
• and
• etching the first photoresist layer using the patterned second photoresist layer as a mask to obtain a patterned first photoresist layer;
• forming a deposition layer on the patterned second photoresist layer and on the substrate exposed through the patterned first photoresist layer, a thickness of the deposition layer being less than a sum of a thickness of the patterned first photoresist layer and a thickness of the patterned second photoresist layer;
• and
• removing the patterned first photoresist layer and the patterned second photoresist layer to obtain a patterned deposition layer.

A method for manufacturing a patterned deposition layer, the method comprising:

• providing a photoresist structure on a substrate, the photoresist structure including:
• a first photoresist layer, having a first aperture;
• and
• a second photoresist layer located at a side of the first photoresist layer opposite to the substrate, the second photoresist layer including an upper aperture distant from the first aperture and a lower aperture approximate to the first aperture, wherein a width of the first aperture is smaller than a width of the lower aperture, the width of the first aperture is larger or equal to the upper aperture, the width of the upper aperture is smaller than the width of the lower aperture;
• forming a deposition layer on the second photoresist layer and on the substrate exposed by the first photoresist layer, a thickness of the deposition layer being less than a sum of a thickness of the first photoresist layer and a thickness of the second photoresist layer;
• and
• removing the first photoresist layer and the second photoresist layer to obtain a patterned deposition layer.