Integrated flowable low-k gap-fill and plasma treatment
AssigneeApplied Materials, Inc.
InventorsMyungsun Kim, Jingmei Liang, Martin J. Seamons, Michael Stolfi, Benjamin Colombeau
Life of this patent
Estimating the term…
Abstract
Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (<600° C.), optional film curing, and etch back to form a low-k dielectric film having a dielectric constant, k-value less than 3.
Claims40
A processing method comprising:
- forming a dielectric film on a substrate surface through a process cycle, the process cycle comprising depositing a flowable low-k dielectric layer on the substrate surface and densifying the flowable low-k dielectric layer and form the dielectric film;
- and
- removing a portion of the dielectric film.
A processing method comprising:
- forming a plurality of film stacks on a substrate, the film stack comprising alternating layers of silicon germanium (SiGe) and silicon (Si);
- etching the film stack to form an opening extending a depth from a top surface of the film stack to a bottom surface, the opening having a width defined by a first sidewall and a second sidewall;
- performing a process cycle comprising depositing a dielectric film on the first sidewall, the second sidewall, and the bottom surface of the opening and densifying the dielectric film;
- and
- removing a portion of the dielectric film.
A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:
- perform a process cycle comprising depositing a dielectric film on a first sidewall, a second sidewall, and a bottom surface of an opening extending a depth from a top surface of a film stack to a bottom surface and densifying the dielectric film;
- and
- remove a portion of the dielectric film;
- and
- optionally, cure the dielectric film.
The non-transitory computer readable medium of claim 21, including further instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform further operations of:
- repeat the process cycle.
A processing method comprising:
- forming a dielectric film on a substrate surface through a process cycle, the process cycle comprising depositing a flowable low-k dielectric layer on the substrate surface and curing the flowable low-k dielectric layer to form the dielectric film;
- and
- removing a portion of the dielectric film.
A processing method comprising:
- forming a plurality of film stacks on a substrate, the film stack comprising alternating layers of silicon germanium (SiGe) and silicon (Si);
- etching the film stack to form an opening extending a depth from a top surface of the film stack to a bottom surface, the opening having a width defined by a first sidewall and a second sidewall;
- performing a process cycle comprising depositing a dielectric film on the first sidewall, the second sidewall, and the bottom surface of the opening and curing the dielectric film;
- and
- removing a portion of the dielectric film.
Dependencies are inferred from the claim text.