Methods for making silicon and nitrogen containing films
AssigneeVersum Materials US, LLC
InventorsMADHUKAR B RAO, XINJIAN LEI, MATTHEW R MACDONALD, MOO-SUNG KIM, SE-WON LEE
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Abstract
A composition for depositing a high quality silicon nitride is introduced into a reactor that contains a substrate, followed by introduction of a plasma that includes an ammonia source. The composition includes a silicon precursor compound having Formula as defined herein.
Claims26
1) A method for forming a silicon nitride or carbon-doped silicon nitride via a plasma enhanced ALD process, the method comprising:
- a) providing a substrate comprising a surface feature in a reactor;
- b) introducing into the reactor a silicon precursor compound having one C2-3 alkylene linkage with the following Formula I:
- wherein X═Cl, Br, or I;
- n=1, 2, or 3;
- m=1, 2, or 3;
- R and R2 are each independently selected from a hydrogen atom, and a C1 to C3 alkyl group;
- R1 is a C2-3 alkylene group having 2 to 10 carbon atoms, wherein the silicon precursor reacts on at least a portion of the surface feature of the substrate to provide a chemisorbed layer;
- c) purging the reactor of any unreacted silicon precursors and/or any reaction by-products using inert gas;
- d) providing a plasma comprising an ammonia source into the reactor to react with the chemisorbed layer to form a silicon nitride film that is optionally carbon-doped;
- and
- e) purging the reactor of any further reaction by-products from step d using inert gas;
- wherein the steps b through e are repeated until a desired thickness of the silicon nitride film is deposited;
- and wherein the reactor is maintained at one or more temperatures ranging from about 25° C. to 600° C.
19) A method for forming a silicon nitride or carbon-doped silicon nitride via a plasma enhanced ALD process, the method comprising:
- a) providing a substrate comprising a surface feature in a reactor;
- b) introducing into the reactor one silicon precursor compound having one C2-3 alkylene linkage having the following Formula I wherein the at least one precursor reacts on at least a portion of the surface feature of the substrate to provide a chemisorbed layer:
- wherein X═Cl, Br, or I;
- n=1, 2, or 3;
- m=1, 2, or 3;
- R and R2 are each independently selected from a hydrogen atom, and a C1 to O3 alkyl group;
- R1 is a C2-3 alkylene group having 2 to 10 carbon atoms, wherein the silicon precursor reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer;
- c) purging the reactor of any unreacted silicon precursors and/or any reaction by-products, using an inert gas;
- d) providing a first plasma source into the reactor to react with the chemisorbed layer to form a silicon nitride film that is optionally carbon-doped;
- e) purging the reactor of any further reaction by-products with an inert gas;
- f) providing a second plasma source into the reactor to further react with the chemisorbed layer to further form the silicon nitride film that is optionally carbon-doped;
- g) purging the reactor of any further reaction by-products with an inert gas;
- wherein the steps b through g are repeated until a desired thickness of the film is deposited;
- and wherein the reactor is maintained at one or more temperatures ranging from about 25° C. to 600° C.
23) A stainless steel container housing a composition of a silicon precursor compound having one C2-3 alkylene linkage having the following Formula I:
- wherein X═Cl, Br, or I;
- n=1, 2, or 3;
- m=1, 2, or 3;
- R and R2 are each independently selected from a hydrogen atom, and a C1 to C3 alkyl group;
- and R1 is a C2-3 alkylene group having 2 to 10 carbon atoms.
Dependencies are inferred from the claim text.