System and method for residual gas analysis
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYen-Liang CHEN
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Abstract
The present disclosure provides embodiments of a system and method for detecting processing chamber condition. The embodiments include performing a wafer-less processing step in a processing chamber to determine the condition of the chamber walls. Based on an analysis of the residual gas resulting from the wafer-less processing step, an operator or a processing controller can determine whether the chamber walls have deteriorated to such an extent as to be cleaned.
Claims20
A method for detecting processing chamber condition, comprising:
- performing a wafer-less processing step in a processing chamber, wherein the wafer-less processing step includes introducing one or more precursor gases into the processing chamber, the one or more precursor gases reacting with each other and residual compounds accumulated on walls of the processing chamber, the reaction resulting in a residual gas;
- analyzing the residual gas for ion species;
- and
- determining a condition of the processing chamber based on the analysis.
A system for detecting processing chamber condition, comprising:
- an ion analyzer module configured to be coupled to a processing chamber, the ion analyzer module further configured to:
- receive a residual gas from the processing chamber as a result of a wafer-less processing step being performed in the processing chamber, wherein the wafer-less processing step includes introducing one or more precursor gases into the processing chamber, the one or more precursor gases reacting with each other and residual compounds accumulated on walls of the processing chamber, the reaction resulting in the residual gas, and
- analyze the residual gas for ion species;
- and
- a process controller configured to determine a condition of the processing chamber based on the analysis.
A computer-readable medium comprising instructions executable by a processor for detecting processing chamber condition by performing the steps of:
- performing a wafer-less processing step in a processing chamber, wherein the wafer-less processing step includes introducing one or more precursor gases into the processing chamber, the one or more precursor gases reacting with each other and residual compounds accumulated on walls of the processing chamber, the reaction resulting in a residual gas;
- analyzing the residual gas for ion species;
- and determining a condition of the processing chamber based on the analysis.
Dependencies are inferred from the claim text.