Plasma processing apparatus and plasma processing method

Abstract

To provide a plasma processing apparatus or a plasma processing method capable of improving a reliability or a yield. The plasma processing apparatus includes: a sample stage that is disposed inside a processing chamber disposed inside a vacuum container and on which a wafer is placed; a ring-shaped electrode made of a conductor, which is disposed on an outer peripheral side of the upper surface of the sample stage so as to surround the sample stage and to which radio frequency power is supplied; a dielectric cover that is placed above the ring-shaped electrode and covers the ring-shaped electrode; a rod-shaped member that is suspended and disposed in a through hole disposed on an outer peripheral side portion of the base material having a disc or cylindrical shape and forming the sample stage, and has a connector portion on an upper end portion of the rod-shaped member connected to the ring-shaped electrode and positioned at the ring-shaped electrode; a beam-shaped member that is disposed below the sample stage below the through hole with a gap therebetween and extends in a horizontal direction, whose one end is connected to a lower end portion of the rod-shaped member and the other end is positioned with respect to the sample stage, and whose the other end urges the rod-shaped member upward with respect to the ring-shaped electrode; and a radio frequency power source that is connected to the rod-shaped member via a power supply path and supplies the radio frequency power to the ring-shaped electrode.

Dependencies are inferred from the claim text.