Plasma processing using pulsed-voltage and radio-frequency power

A method of processing of a substrate in a plasma processing chamber, comprising:

• delivering, by use of a radio frequency generator, a radio frequency signal to a support base disposed within a substrate support assembly, wherein the radio frequency generator is electrically coupled to the support base through a pulsed voltage filter assembly;
• establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly, wherein the first pulsed-voltage waveform generator is electrically coupled to the biasing electrode through a first radio frequency filter assembly;
• and
• establishing, by use of a second pulsed-voltage waveform generator, a second pulsed voltage waveform at an edge control electrode disposed within the substrate support assembly, wherein the second pulsed-voltage waveform generator is electrically coupled to the edge control electrode through a second radio frequency filter assembly,
• wherein
• the biasing electrode is disposed between the support base and a substrate supporting surface of the substrate support assembly,
• a first dielectric layer is disposed between the support base and the biasing electrode,
• a second dielectric layer is disposed between the biasing electrode and the substrate supporting surface, and
• the edge control electrode surrounds at least a portion of the biasing electrode.