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AssigneesTokyo Electron Limited, Tohoku University
InventorsSatoru KAWAKAMI, Hiroyuki YAMAMOTO, Taro IKEDA, Masaki HIRAYAMA
Estimating the term…
The plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, an upper electrode, a dielectric plate, and a waveguide. The stage is provided in the processing container. The dielectric plate is provided above the stage with a space in the processing container interposed therebetween. The upper electrode is provided above the dielectric plate. The waveguide has an end and guides high frequency waves in a VHF band or a UHF band. The end is arranged to face the space to radiate high frequency waves to the space. The dielectric plate includes a conductive film. The conductive film is provided on an upper surface of the dielectric plate. The upper surface faces the upper electrode. The conductive film is electrically connected to the upper electrode.
1-19. (canceled)
A plasma processing apparatus, comprising:
A plasma processing method for performing plasma processing on a processing target object using a plasma processing apparatus, wherein an upper electrode, a dielectric plate, a stage and a waveguide are provided in a processing container of the plasma processing apparatus, the dielectric plate is provided above the stage with a space in the processing container interposed therebetween, the upper electrode is provided above the dielectric plate, and an end of the waveguide is arranged to face the space to radiate high frequency waves in a VHF band or a UHF band into the space, the method comprising:
Dependencies are inferred from the claim text.