Insulator for an ion implantation source
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Min LIN, Sheng-Chi LIN, Jui-Feng JAO, Fang-Chi CHIEN, Lung-Yin TANG
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Min LIN, Sheng-Chi LIN, Jui-Feng JAO, Fang-Chi CHIEN, Lung-Yin TANG
Estimating the term…
An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.
An insulator for an ion implantation source, comprising:
An ion source head, comprising:
An ion implantation system, comprising:
Dependencies are inferred from the claim text.