Memory device and method of operating the same

A page buffer, comprising:

• a switch coupled between a bit line and a node;
• a first precharge circuit coupled between the node and a supply voltage node, and configured to precharge the node to a first voltage based on whether a memory cell coupled to the bit line is a selected memory cell on which a memory operation is performed;
• and
• a second precharge circuit coupled between the node and the supply voltage node, and configured to clamp a potential of the node to a second voltage based on whether the memory cell is the selected memory cell.

A method of operating a memory device including a plurality of memory cells, the method comprising:

• performing a bit line precharge operation of precharging first bit lines coupled to first memory cells, among the plurality of memory cells, to a first voltage;
• precharging second bit lines coupled to second memory cells, among the plurality of memory cells, to a second voltage during the bit line precharge operation;
• performing an evaluation operation of sensing voltages of the first bit lines determined based on threshold voltages of the first memory cells after the bit line precharge operation;
• and
• clamping potentials of the second bit lines to the second voltage during the evaluation operation.