Apparatuses and methods including memory cells, digit lines, and sense amplifiers
AssigneeMicron Technology, Inc.
InventorTae H. Kim
Life of this patent
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AssigneeMicron Technology, Inc.
InventorTae H. Kim
Estimating the term…
Apparatuses and methods including memory cells, digit lines, and sense amplifiers are described. An example apparatus includes a pair of digit lines including first and second digit lines, a sense amplifier coupled to the pair of digit lines and configured to amplify a voltage difference between the first and second digit lines when activated, and a plurality of memory cells. A memory cell of the plurality of memory cells includes a first node coupled to the first digit line and includes a second node coupled to the second digit line. The memory cell of the plurality of memory cells is configured to store a respective voltage and/or charge at a respective cell node and couple the respective voltage and/or charge to the first node when activated.
An apparatus, comprising:
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An apparatus, comprising:
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A method, comprising:
Dependencies are inferred from the claim text.