Semiconductor Devices Including Ferroelectric Memory and Methods of Forming the Same

A semiconductor device comprising:

• a transistor structure over a semiconductor substrate;
• a first spacer extending along a sidewall of a gate structure of the transistor structure;
• a first dielectric layer over the gate structure, the first dielectric layer extending along a sidewall of the first spacer;
• and
• a capacitor over the gate structure, the capacitor extending through the first dielectric layer, the capacitor comprising:
• a first electrode over the gate structure;
• a memory film over the first electrode, the memory film extending along a topmost surface of the first electrode, wherein the topmost surface of the first electrode is above a bottommost surface of the memory film;
• and
• a second electrode over the memory film.

A method comprising:

• forming a gate stack over a substrate, wherein the gate stack is adjacent a gate spacer;
• etching the gate stack to form a first recess;
• depositing a first electrode layer in the first recess;
• etching the first electrode layer such that top surfaces of the first electrode layer are below a top surface of the gate spacer;
• depositing a memory film over the first electrode layer;
• depositing a second electrode layer over the memory film;
• and
• planarizing the memory film and the second electrode layer such that a top surface of the memory film, a top surface of the second electrode layer, and a top surface of the gate spacer are level with one another.