Optoelectronic synaptic memristor

An optoelectronic synaptic device array, comprising:

• N*M optoelectronic synaptic memristors, wherein N≥1 and M≥1;
• all the optoelectronic synaptic memristors share one bottom electrode, but electrical signals of the optoelectronic synaptic memristors are individually controlled through independent top electrodes;
• each of the optoelectronic synaptic memristors has an independent waveguide system, and light of different intensities and wavelengths are input through different grating couplers;
• through each waveguide, the light is accurately injected into each of the optoelectronic synaptic memristors and functions of the optoelectronic synaptic memristors are separately regulated.

A method for realizing an optoelectronic memristive effect with an optoelectronic synaptic memristor, comprising steps of:

• a writing process:
• grounding a bottom electrode layer;
• injecting a weak infrared light which is sensitive to quantum dots but insensitive to a two-dimensional material through a ridge waveguide;
• converting the weak infrared light by the quantum dots to obtain a short-wavelength light to the two-dimensional material;
• applying a continuous forward voltage to a top electrode layer;
• wherein due to vacancy defect migration in the two-dimensional material, a conductive filament is formed;
• meanwhile, due to an optoelectronic effect of the short-wavelength light, a device resistance state is set to a low resistance state through optoelectronic synergy;
• an erasing process:
• injecting a strong infrared light which is sensitive to the quantum dots but insensitive to the two-dimensional material through the ridge waveguide, and applying a continuous reverse voltage to the top electrode layer;
• wherein under an electric field, the conductive filament is broken due to the vacancy defects migrate inversely in the two-dimensional material;
• meanwhile, a strong photothermal effect of the strong infrared light exceeds an up-conversion optoelectronic effect, which inhibits a photocurrent and sets the device resistance state to a high resistance state;
• and
• controlling quantities, pulse widths, periods, and amplitudes of electrical pulses to regulate multi-values among the low resistance state and the high resistance state, thereby obtaining multiple storage states and simulating corresponding synaptic functions.