US 2022/0035256 A1 · DETERMINING HOT SPOT RANKING BASED ON WAFER MEASUREMENT

Abstract

A method of hot spot ranking for a patterning process. The method includes obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (ii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots; determining a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process; and determining, via simulation of a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.

Claims20

Dependent claims

A comprising:

obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (iii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots;
determining, via a hardware computer system, a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process;
and
determining, via computer simulation using a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.

1 more element

A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:

obtain (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (iii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots;
determine a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process;
and
determine, via computer simulation using a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

17/276,533Filed 20 Sep 2019

Priority

28 Sep 2018

Published

3 Feb 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

G03F 7/705
Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring…:…
G03F 7/70525
Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring…:…
G03F 7/70641
Monitoring the printed patterns: focus
G03F 7/7065
Monitoring the printed patterns: defects, e.g. optical inspection of patterned layer for defects

Determining hot spot ranking based on wafer measurement

Life of this patent

Determining hot spot ranking based on wafer measurement

Life of this patent

Abstract

Claims20