Device containing metal oxide-containing layers

A process for preparing a device comprising a first layer and a first electrode, the process comprising a step forming the first layer over a first electrode by applying a liquid anhydrous composition comprising

• i) at least one metal oxo alkoxide of formula (I)
• MxOy(OR)z[O(R′O)cH]zXb[R″OH]d (I)
• where x=3 to 25,
• y=1 to 10,
• z=3 to 50,
• a=0 to 25,
• b=0 to 20,
• c=0 to 1,
• d=0 to 25,
• and M=In, Zn, Ga, Y, Sn, Ge, Sc, Ti, Zr, Al, W, Mo, Ni, Cr, Fe, Hf, Ta, Nb and/or Cu, R, R′, R″=same or different organic radicals, and X=F, Cl, Br, I and
• ii) at least one solvent,
• onto a surface, the surface being selected from the surface of the first electrode or the surface of a layer being located over the first electrode, drying the composition, and converting the composition to a metal oxide-containing first layer, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after the formation of the first layer.