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US 2022/0033970 A1Published application
Silicide film nucleation
AssigneeApplied Materials, Inc.
InventorsXuebi LI, Errol Antonio C. SANCHEZ, Patricia M. LIU
Life of this patent
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Abstract
Embodiments disclosed herein are directed to forming MOSFET devices. In particular, one or more pre-silicide treatments are performed on a substrate prior to the deposition of the metal-silicide layer to improve the density and performance of the metal-silicide layer in the MOSFETs. The metal-silicide formation formed with the pre-silicide treatment(s) can occur before or after the formation of metal gates during MOSFET fabrication.
Claims20
A system for fabricating a MOSFET device, comprising:
- a transfer chamber defining a transfer space;
- a plurality of process chambers, wherein each process chamber of the plurality of process chambers is coupled to the transfer chamber;
- a transfer robot in the transfer space configured to access the transfer chamber and the plurality of process chambers;
- and
- a controller comprising instructions for device fabrication, wherein, when executed by a processor, the instructions cause the system to:
- retrieve a substrate from the transfer chamber;
- dispose the substrate in a first process chamber of the plurality of process chambers;
- perform at least one pre-silicide treatment on the substrate in the first process chamber to increase a concentration of a dopant within the substrate or to increase a surface roughness of the substrate;
- and
- subsequently, form, by deposition, a metal-silicide on the substrate.
7 more elements
A system for fabricating a MOSFET device, comprising:
- a transfer chamber defining a transfer space;
- a plurality of process chambers, wherein each process chamber of the plurality of process chambers is coupled to the transfer chamber;
- a transfer robot in the transfer space configured to access the transfer chamber and the plurality of process chambers;
- a controller comprising instructions for device fabrication, wherein, when executed by a processor, the instructions cause the system to:
- retrieve a substrate from the transfer chamber;
- dispose the substrate in a first process chamber of the plurality of process chambers;
- form a seed layer on the substrate in the first process chamber, wherein the seed layer comprises a doped silicon layer from 1 nm to 5 nm thick;
- and
- subsequently, form, by chemical vapor deposition, a metal-silicide on the seed layer, wherein forming the metal-silicide layer consumes a first portion of the seed layer, and wherein a second portion of the seed layer remains on the substrate after forming the metal-silicide layer.
6 more elements
A system for fabricating a MOSFET device, comprising:
- a transfer chamber defining a transfer space;
- a plurality of process chambers, wherein each process chamber of the plurality of process chambers is coupled to the transfer chamber;
- a transfer robot in the transfer space configured to access the transfer chamber and the plurality of process chambers;
- a controller comprising instructions for device fabrication, wherein, when executed by a processor, the instructions cause the system to:
- retrieve a substrate from the transfer chamber;
- dispose the substrate in a first process chamber of the plurality of process chambers;
- perform a pre-silicide treatment on the substrate, wherein the pre-silicide treatment comprises one or more of:
- forming a seed layer, wherein the seed layer is from 1 nm to 5 nm thick and comprises a dopant concentration from 1E19 atoms/cm3 to 1E23 atoms/cm3;
- exposing the substrate to one or more precursor sources to form a doped surface of the substrate;
- implanting a dopant in the substrate;
- and
- etching a surface of the substrate;
- and
- subsequent to performing the pre-silicide treatment on the substrate, form, by chemical vapor deposition, a metal-silicide layer on the treated substrate.
11 more elements
Dependencies are inferred from the claim text.