US 2022/0033966 A1 · HETEROALKYLCYCLOPENTADIENYL INDIUM-CONTAINING PRECURSORS AND PROCESSES OF USING THE SAME FOR DEPOSITION OF INDIUM-CONTAINING LAYERS

Abstract

Methods for forming an Indium-containing film by a vapor deposition method using a heteroalkylcyclopentadienyl Indium (I) precursor having a general formula: In[R1R2R3R4CpL1] or In[CpL1L2y] wherein Cp represents a cyclopentadienyl ligand; R1 to R4 are each independently H, C1-C4 linear, branched or cyclic alkyls; L1 and L2 are each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I; and y=1-4. Examplary heteroalkylcyclopentadienyl Indium (I) precursors include In(Cp(CH2)3NMe2) or In(CpPiPr2).

Claims20

Dependent claims

A method for forming an Indium-containing film, the method comprising the steps of:

exposing a substrate to a vapor of a film forming composition;
wherein the film forming composition comprises a heteroalkylcyclopentadienyl Indium (I) precursor having a general formula:
In[R1R2R3R4CpL1] or
In[CpL1L2y]
wherein Cp represents a cyclopentadienyl ligand;
R1 to R4 are each independently H, C1-C4 linear, branched or cyclic alkyls;
L1 and L2 are each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I;
and y=1-4;
and
depositing at least part of the heteroalkylcyclopentadienyl Indium(I) precursor onto the substrate to form the Indium-containing film using a vapor deposition method.

7 more elements

Dependencies are inferred from the claim text.

Heteroalkylcyclopentadienyl indium-containing precursors and processes of using the same for deposition of indium-containing layers

Life of this patent

Heteroalkylcyclopentadienyl indium-containing precursors and processes of using the same for deposition of indium-containing layers

Life of this patent

Abstract

Claims20