Method for producing a component part of a cvd reactor
AssigneeAixtron SE
InventorsMarcel KOLLBERG, Francisco RUDA Y WITT
Life of this patent
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Abstract
A component made of a quartz blank is used as a component part of a CVD reactor. At least one cavity of the component is created by selective laser etching, wherein a fluid flows through the at least one cavity. When in use, the component is heated to temperatures in excess of 500° C., and comes into contact with hydrides of the main groups IV, V or VI and/or with organometallic compounds or halogenides of elements of the main groups II, III or V.
Claims21
A method for manufacturing a component of a chemical vapor deposition (CVD) reactor (1), which consists of quartz, and has at least one cavity (8′, 8″, 8″;
- 13, 14, 14′;
- 9.1, 9.2, 9.3, 9.4, 9.5;
- 35, 36, 37, 38, 39, 40, 41), the method comprising etching the at least one cavity (8′, 8″, 8″;
- 13, 14, 14′;
- 9.1, 9.2, 9.3, 9.4, 9.5;
- 35, 36, 37, 38, 39, 40, 41) by selective laser etching.
A method of using a component produced from a quartz blank, in which at least one cavity (8′, 8″, 8″;
- 13, 14, 14′;
- 9.1, 9.2, 9.3, 9.4, 9.5;
- 35, 36, 37, 38, 39, 40, 41) of the component has been generated by selective laser etching, as part of a chemical vapor deposition (CVD) reactor (1), the method comprising:
- flowing a fluid through the at least one cavity (8′, 8″, 8″;
- 13, 14, 14′;
- 9.1, 9.2, 9.3, 9.4, 9.5;
- 35, 36, 37, 38, 39, 40, 41);
- heating the component to temperatures above 500° C.;
- and
- exposing the component to hydrides of the IV-, V-, or VI-main group, and/or with organometallic compounds, or halogen compounds of elements of the II-, III-, or V-main group.
A device for distributing gas in a chemical vapor deposition (CVD) reactor, the device comprising:
- a gas distribution chamber (8, 8′, 8″, 38) formed by a cavity;
- a gas supply line (9.1, 9.2, 9.3, 9.4, 9.5, 39) leading into the gas distribution chamber (8, 8′, 8″, 38);
- and
- a plurality of gas passage holes (13, 14, 14′, 37) leading out of the gas distribution chamber (8, 8′, 8″, 38),
- wherein an inner surface of the gas distribution chamber (8, 8′, 8″, 38) is closed in a materially integral manner, except for the gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5, 39) leading into the gas distribution chamber (8, 8′, 8″, 38), and the gas passage holes (13, 14, 14′, 37) leading out of the gas distribution chamber (8, 8′, 8″, 38).
(canceled)
Dependencies are inferred from the claim text.