Area selective nanoscale-thin layer deposition via precise functional group lithography
AssigneeThe Curators of the University of Missouri
InventorsMATTHEW R. MASCHMANN, MATTHIAS J. YOUNG
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Abstract
The present disclosure relates to a method of depositing a nanoscale-thin film onto a substrate. The method generally comprises depositing a layer of a solid or gaseous state functionalizing molecule onto or adjacent to the first surface of the substrate and exposing the first surface to a source of ionizing radiation, thereby functionalizing the first surface of the substrate. Once the layer of functionalizing molecule is removed, a nanoscale-thin film is then deposited onto the functionalized first surface of the substrate.
Claims20
A method of depositing a nanoscale-thin film in a preselected area on a substrate, the method comprising:
- depositing a layer of a functionalizing molecule onto or adjacent to a first surface of the substrate;
- functionalizing the first surface of the substrate by focusing a source of ionizing radiation onto the layer of the functionalizing molecule;
- removing the layer of the functionalizing molecule;
- and
- depositing a nanoscale-thin film onto the functionalized first surface of the substrate;
- wherein the functionalizing molecule is in a solid or gaseous state.
A method of functionalizing a preselected area on a substrate, the method comprising:
- depositing a layer of a functionalizing molecule onto or adjacent to a first surface of the substrate;
- focusing a source of ionizing radiation onto the layer of functionalizing molecule;
- and
- rastering the source of ionizing radiation along the layer of functionalizing molecule to create a desired pattern of functionality on the substrate;
- wherein the source of ionizing radiation dissociates the functionalizing molecule through radiolysis, and the reaction products of the radiolysis functionalize the substrate;
- and
- wherein the functionalizing molecule is in a solid or gaseous state.
Dependencies are inferred from the claim text.