Deposition system and processing system

A deposition system, comprising:

• a reaction chamber;
• one or more gas supply units respectively configured to supply one or more precursors to the reaction chamber in a gaseous state;
• a reactant supply unit configured to supply a reactant, reacting with the one or more precursors, to the reaction chamber;
• and
• an exhaust unit configured to discharge an exhaust material from the reaction chamber,
• wherein the one or more gas supply units comprise:
• a sub tank to which an automatic refill system forming a negative pressure in a pipe between a main tank and the gas supply unit and periodically filling the precursor to maintain a state in which the precursor can be supplied to the reaction chamber is applied;
• a vaporizer for supplying the precursor to the reaction chamber in a gaseous state;
• and a liquid mass flow controller controlling an amount of the precursor supplied to the vaporizer,
• wherein the exhaust unit comprises a plasma pretreatment system chamber, a pump, and a scrubber, and
• wherein the plasma pretreatment system chamber exhausts the exhaust material through the pump, after a plasma pretreatment system is applied, wherein the plasma pretreatment system changes a chemical structure of the exhaust material.

A process system, comprising:

• at least one automatic refill system configured to form a negative pressure in a pipe connected to a main tank storing a process material in liquid state to fill a sub tank automatically with the process material, and to maintain the process material stored in the sub tank above a certain amount;
• a gas supply system configured to supply the process material stored in the sub tank to the reaction chamber in a gaseous state,
• a plasma pretreatment system configured to induce plasma discharge to change a chemical structure of an exhaust material discharged from the reaction chamber,
• wherein the gas supply system is configured to operate a liquid mass flow controller and a vaporizer connected between the sub tank and the reaction chamber, and
• wherein the liquid mass flow controller is configured to control an amount of the process material supplied to the vaporizer.