Method to form a rough crystalline surface
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorTing-Jung Chen
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorTing-Jung Chen
Estimating the term…
Various embodiments of the present disclosure are directed towards a method to roughen a crystalline layer. A crystalline layer is deposited over a substrate. A mask material is diffused into the crystalline layer along grain boundaries of the crystalline layer. The crystalline layer and the mask material may, for example, respectively be or comprise polysilicon and silicon oxide. Other suitable materials are, however, amenable. An etch is performed into the crystalline layer with an etchant having a high selectivity for the crystalline layer relative to the mask material. The mask material defines micro masks embedded in the crystalline layer along the grain boundaries. The micro masks protect underlying portions of the crystalline layer during the etch, such that the etch forms trenches in the crystalline layer where unmasked by the micro masks.
1-7. (canceled)
A microelectromechanical systems (MEMS) package comprising:
14-20. (canceled)
A microelectromechanical systems (MEMS) package comprising:
A microelectromechanical systems (MEMS) package comprising:
Dependencies are inferred from the claim text.