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US 2022/0029007 A1Published application
Semiconductor structure and semiconductor device
AssigneeVanguard International Semiconductor Corporation
InventorsChih-Yen CHEN, Franky Juanda LUMBANTORUAN
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Abstract
A semiconductor structure and a semiconductor device are provided. The semiconductor includes a substrate, a seed layer on the substrate, a buffer layer on the seed layer, a back barrier layer with a V-group element polarity on the buffer layer, a channel layer on the back barrier layer, and a front barrier layer on the channel layer.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a seed layer on the substrate;
- a buffer layer on the seed layer;
- a back barrier layer with a V-group element polarity on the buffer layer;
- a channel layer on the back barrier layer;
- and
- a front barrier layer on the channel layer.
4 more elements
Dependencies are inferred from the claim text.