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US 2022/0029000 A1Published application
Iii-v compound semiconductor layer stacks with electrical isolation provided by a trap-rich layer
AssigneeGlobalFoundries U.S. Inc.
InventorsAnthony K. Stamper, Siva P. Adusumilli, Vibhor Jain, Steven Bentley
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Abstract
Semiconductor structures including electrical isolation and methods of forming a semiconductor structure including electrical isolation. A layer stack is formed on a semiconductor substrate comprised of a single-crystal semiconductor material. The layer stack includes a semiconductor layer comprised of a III-V compound semiconductor material. A polycrystalline layer is formed in the semiconductor substrate. The polycrystalline layer extends laterally beneath the layer stack.
Claims20
A structure comprising:
- a semiconductor substrate comprised of a single-crystal semiconductor material;
- a layer stack on the semiconductor substrate, the layer stack including a first layer comprised of a first III-V compound semiconductor material;
- and
- a polycrystalline layer in the semiconductor substrate, the polycrystalline layer extending laterally beneath the layer stack.
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A method comprising:
- forming a polycrystalline layer in a semiconductor substrate comprised of a single-crystal semiconductor material;
- and
- forming a layer stack on the semiconductor substrate,
- wherein the layer stack includes a layer comprised of a III-V compound semiconductor material, and the polycrystalline layer extends laterally beneath the layer stack.
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Dependencies are inferred from the claim text.