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US 2022/0028965 A1Published application
Electrostatic discharge protection semiconductor structure and a method of manufacture
AssigneeNexperia B.V.
InventorHans-Martin Ritter
Life of this patent
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Abstract
A discharge protection semiconductor structure is provided that includes a substrate, a well positioned on the substrate, a first contact diffusion and a second contact diffusion, the first contact diffusion and the second contact diffusion positioned on the top side of the well, and a resistor positioned between the first contact diffusion and a second contact diffusion.
Claims19
A discharge protection semiconductor structure comprising:
- a substrate;
- a well positioned on the substrate, wherein the well is of a first polarity;
- and
- a resistor embedded in the well,
- wherein the resistor is of a second polarity, the second polarity being inversed in respect to the first polarity,
- wherein doping of the well and doping of the resistor are of a similar level.
3 more elements
A two-stage protection system comprising:
- a first protection stage;
- a second protection stage connected between a signal line and a supply line;
- and
- a resistor as claimed in any of the previous claims positioned in the signal line between the first protection stage and the second protection stage.
1 more element
Dependencies are inferred from the claim text.