Method for Producing a Radiation-Emitting Semiconductor Device and Radiation-Emitting Semiconductor Device

A method for producing a radiation-emitting semiconductor device, the method comprising:

• providing a carrier plate having contact elements;
• applying a radiation-emitting semiconductor chip to the carrier plate;
• epitaxially producing first conversion elements;
• epitaxially producing second conversion elements;
• and
• applying the first conversion elements and the second conversion elements to the semiconductor chip,
• wherein the semiconductor chip comprises emitter regions for emitting primary electromagnetic radiation from a radiation exit area,
• wherein the first conversion elements are simultaneously applied to at least some of the emitter regions after the epitaxial fabrication, and
• wherein the first conversion elements and the second conversion elements are arranged in a common plane.

A radiation-emitting semiconductor device comprising:

• a carrier plate having contact elements;
• a radiation-emitting semiconductor chip arranged on the carrier plate;
• first conversion elements arranged on the semiconductor chip;
• and
• second conversion elements arranged on the semiconductor chip,
• wherein the semiconductor chip comprises emitter regions, each emitter region configured to emit primary electromagnetic radiation from a radiation exit area,
• wherein the first conversion elements and the second conversion elements are formed of a semiconductor material,
• wherein the first conversion elements and the second conversion elements are arranged in a common plane, and
• wherein the conversion elements are epitaxial conversion elements.