Light-emitting element, method of fabricating the light-emitting element, and display device

A method of fabricating a light-emitting element, comprising:

• forming a semiconductor structure on a target substrate, the semiconductor structure including semiconductor layers;
• forming a mask layer on the semiconductor structure;
• etching the semiconductor structure in a direction perpendicular to a top surface of the target substrate to form element rods, each of the element rods including an insulating structure and the semiconductor layers, the insulating structure being formed by a part of the mask layer;
• forming insulating films surrounding parts of side surfaces of the element rods;
• and
• separating the element rods with the insulating films from the target substrate.

A display device comprising:

• a first substrate;
• a first electrode disposed on the first substrate;
• a second electrode spaced apart from the first electrode;
• a first insulating layer disposed on the first substrate and covering the first electrode and the second electrode;
• a plurality of light-emitting elements disposed on the first insulating layer and including end portions disposed on the first electrode and the second electrode;
• a first contact electrode that electrically contacts the first electrode and first end portions of the plurality of light-emitting elements;
• and
• a second contact electrode that electrically contacts the second electrode and second end portions of the plurality of light-emitting elements,
• wherein each of the plurality of light-emitting elements includes:
• a first semiconductor layer doped with an n-type dopant;
• a second semiconductor layer doped with a p-type dopant;
• a light-emitting layer disposed between the first and second semiconductor layers;
• an electrode layer disposed on the second semiconductor layer;
• an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer;
• and
• an insulating film that surrounds side surfaces of the first semiconductor layer,
• the light-emitting layer, and the second semiconductor layer.