Display device, light-emitting diode substrate, and fabrication method of display device

A light-emitting diode substrate, comprising:

• a growth substrate;
• and
• a light-emitting diode, comprising:
• a semiconductor stack layer, formed on the growth substrate;
• and
• two electrodes, formed on the semiconductor stack layer, wherein each of the electrodes comprises:
• a first conductive layer, formed on the semiconductor stack layer;
• a barrier layer, formed on the first conductive layer, wherein an adhesion of a material selected for the first conductive layer to the semiconductor stack layer is greater than an adhesion of a material selected for the barrier layer to the semiconductor stack layer;
• and
• a metal layer, formed on the barrier layer, wherein a melting point of the metal layer is lower than 260 degrees Celsius.

A fabrication method of a display device, comprising:

• forming a plurality of light-emitting diodes, wherein each of the light-emitting diodes comprises:
• a semiconductor stack layer;
• and
• two electrodes, formed on the semiconductor stack layer, wherein each of the electrodes comprises:
• a first conductive layer, formed on the semiconductor stack layer;
• a barrier layer, formed on the first conductive layer, wherein an adhesion of a material selected for the first conductive layer to the semiconductor stack layer is greater than an adhesion of a material selected for the barrier layer to the semiconductor stack layer;
• and
• a metal layer, formed on the barrier layer, wherein a melting point of the metal layer is lower than 260 degrees Celsius;
• transferring one of the light-emitting diodes onto a circuit substrate, wherein the circuit substrate comprises a plurality of pads, and a position of the one of the light-emitting diodes corresponds to two of the pads of the circuit substrate;
• and
• heating the one of the light-emitting diodes to eutectically bond the metal layers of the one of the light-emitting diodes to the two of the pads.