Light emitting device with small footprint

A method for forming a light emitting device, the method comprising:

• providing a transistor substrate having a top surface and a bottom surface, the top surface comprising a plurality of conductive regions;
• forming two transistors in the top surface of the transistor substrate and a capacitor;
• providing an LED substrate;
• forming an LED on the LED substrate, the LED having a largest area and wherein the LED comprises gallium nitride, indium gallium nitride, indium arsenide, aluminum gallium arsenide, gallium arsenide, gallium phosphide, gallium arsenide phosphide, aluminum indium gallium phosphide, gallium arsenide nitride, aluminum indium arsenide, aluminum antimonide, indium phosphide, indium antimonide, or indium gallium arsenide phosphide, and combinations thereof;
• forming a reflector layer;
• bonding the two transistors, capacitor, and transistor substrate to the LED, wherein after bonding, the reflector layer is disposed between the LED and the transistor substrate, the LED is in operative communication with at least one of the two transistors, and the LED overlies the two transistors and capacitor;
• removing a portion of the transistor substrate;
• and
• forming a plurality of through substrate interconnects, wherein each through substrate interconnect of the plurality extends through the transistor substrate from the conductive region of the plurality of conductive regions to the bottom surface of the transistor substrate.