Image sensor including a back via stack

An image sensor comprising:

• a first structure comprising a first substrate and a first internal wiring structure, wherein the first substrate comprises a first surface, a second surface opposite to the first surface, an active pixel region and a through electrode region around the active pixel region, wherein a plurality of active pixels are arranged in the active pixel region, wherein the first internal wiring structure comprises a first wiring pattern having a first opening, a second wiring pattern having a second opening, a third wiring pattern having a third opening, and a fourth wiring pattern having a fourth opening, wherein the first wiring pattern, the second wiring pattern, the third wiring pattern, and the fourth wiring pattern are sequentially arranged in the stated order vertically away from the first surface of the first substrate;
• a second structure comprising a second substrate and a second internal wiring structure on the second substrate, wherein a driving circuit configured to drive the plurality of active pixels is arranged in the second substrate, wherein the second substrate is arranged on the first surface of the first substrate, and wherein the second internal wiring structure is electrically connected to the driving circuit;
• and
• a through electrode layer arranged in the through electrode region to at least partially fill a through electrode trench and electrically connect the first internal wiring structure to the second internal wiring structure, wherein the through electrode trench penetrates the first substrate and extends through the first opening, the second opening, the third opening, and the fourth opening,
• wherein each of the first opening, the second opening, the third opening, and the fourth opening has a rectangular shape, and the first opening, the second opening, the third opening, and the fourth opening are aligned with each other with respect to one side from among four sides of each rectangular shape of the first opening, the second opening, the third opening, and the fourth opening,
• and wherein the fourth opening is not aligned with the first opening, the second opening, and the third opening, with respect to remaining three sides of each rectangular shape of the first opening, the second opening, the third opening, and the fourth opening.

An image sensor comprising:

• a first structure comprising a first substrate, a first internal wiring structure, a first interlayer dielectric surrounding the first internal wiring structure, and a first cover insulating film covering the first internal wiring structure and the first interlayer dielectric, wherein the first substrate includes a first surface and a second surface opposite to the first surface, wherein the first structure comprises an active pixel region and a through electrode region around the active pixel region, wherein the active pixel region includes a plurality of active pixels, wherein the first internal wiring structure comprises a first wiring pattern having a first opening, a second wiring pattern having a second opening, a third wiring pattern having a third opening, and a fourth wiring pattern having a fourth opening, wherein the first wiring pattern, the second wiring pattern, the third wiring pattern, and the fourth wiring pattern are sequentially arranged in the stated order vertically away from the first surface of the first substrate;
• a second structure comprising a second substrate, a second internal wiring structure on the second substrate, a second interlayer dielectric surrounding the second internal wiring structure, and a second cover insulating film that covers the second internal wiring structure and the second interlayer dielectric and contacts the first cover insulating film, wherein the second substrate includes a driving circuit configured to drive the plurality of active pixels and is arranged on the first substrate, and wherein the second internal wiring structure comprises a stack connection pad and is electrically connected to the driving circuit;
• and
• a through electrode layer arranged in the through electrode region to cover an inner wall and a bottom surface of a through electrode trench and electrically connect the first internal wiring structure to the second internal wiring structure by contacting the second wiring pattern, the third wiring pattern, the fourth wiring pattern, and the stack connection pad, wherein the through electrode trench extends through the first opening, the second opening, the third opening, and the fourth opening and penetrates the first substrate, the first interlayer dielectric, the first cover insulating film, and the second cover insulating film,
• wherein each of the first opening, the second opening, the third opening, and the fourth opening has a rectangular shape, and the first opening, the second opening, the third opening, and the fourth opening are aligned with each other with respect to one side from among four sides of each rectangular shape of the first opening, the second opening, the third opening, and the fourth opening,
• and wherein a portion of the fourth wiring pattern contacts the through electrode layer, wherein the portion of the fourth wiring pattern is adjacent to remaining three sides of the rectangular shape of the fourth opening, wherein the remaining three sides of the rectangular shape of the fourth opening are not vertically aligned with remaining three sides of the rectangular shape of each of the first opening, the second opening, and the third opening.