Semiconductor device structure and methods of forming the same

A semiconductor device structure, comprising:

• a device;
• a first dielectric material disposed over the device;
• a first conductive feature disposed in the first dielectric material;
• a second dielectric material disposed over the first dielectric material, wherein the second dielectric material has an opening formed therein, and the opening is defined by a first sidewall of the second dielectric material;
• a conductive structure disposed in the opening;
• and
• a surrounding structure disposed in the opening, wherein the surrounding structure comprises:
• a first spacer layer comprising a first portion and a second portion, wherein the first portion of the first spacer layer is disposed on the first sidewall of the second dielectric material, and the second portion of the first spacer layer is disposed on the first dielectric material;
• and
• a second spacer layer disposed on the second portion of first spacer layer, wherein an air gap is formed between the first portion of the first spacer layer and the second spacer layer.

A semiconductor device structure, comprising:

• a first dielectric material;
• a first conductive feature disposed in the first dielectric material;
• a second dielectric material disposed over the first dielectric material;
• a conductive structure disposed in the second dielectric material;
• and
• a surrounding structure disposed in the second dielectric material surrounding the conductive structure, wherein the surrounding structure comprises:
• a first spacer layer comprising a first portion and a second portion, wherein the first portion of the first spacer layer is disposed on a first sidewall of the second dielectric material, and the second portion of the first spacer layer is disposed on the first dielectric material;
• and
• a second spacer layer disposed on the second portion of first spacer layer, wherein an air gap is formed between the first portion of the first spacer layer and the second spacer layer.