Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae LEE
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a stack structure including conductive patterns and stack insulating layers, which are alternately stacked; a channel structure penetrating the stack structure; a tunnel insulating layer surrounding the channel structure; a cell storage pattern surrounding the tunnel insulating layer; and a dummy storage pattern surrounding the tunnel insulating layer, the dummy storage pattern being spaced apart from the cell storage pattern. The conductive patterns include a select conductive pattern in contact with the tunnel insulating layer.
Claims19
A semiconductor device comprising:
- a stack structure including conductive patterns and stack insulating layers, which are alternately stacked;
- a channel structure penetrating the stack structure;
- a tunnel insulating layer surrounding the channel structure;
- a cell storage pattern surrounding the tunnel insulating layer;
- and
- a dummy storage pattern surrounding the tunnel insulating layer, the dummy storage pattern being spaced apart from the cell storage pattern,
- wherein the conductive patterns include a select conductive pattern in contact with the tunnel insulating layer.
A semiconductor device comprising:
- a stack structure including stack insulating layers and conductive patterns, which are alternately stacked;
- cell plugs penetrating the stack structure;
- and
- an isolation structure between the cell plugs,
- wherein the conductive patterns include a select conductive pattern in contact with the isolation structure,
- wherein a recess is defined when a sidewall of the isolation structure is depressed, and
- wherein the select conductive pattern includes an insertion part inserted into the recess.
A semiconductor device comprising:
- a stack structure including stack insulating layers and conductive patterns, which are alternately stacked;
- a cell plug penetrating the stack structure;
- and
- an insulating structure covering the stack structure and the cell plug,
- wherein the cell plug includes a protrusion part protruding to the outside of the stack structure,
- wherein the insulating structure includes a first part covering the protrusion part and a second part covering a top surface of the stack structure, and
- wherein a width of the first part is largest at a first level between a central portion of the first part and an uppermost portion of the first part.
Dependencies are inferred from the claim text.